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1

Miniaturization of CMOS

Radamson, Henry H., He, Xiaobin, Zhang, Qingzhu, Liu, Jinbiao, Cui, Hushan, Xiang, Jinjuan, Kong, Zhenzhen, Xiong, Wenjuan, Li, Junjie, Gao, Jianfeng, Yang, Hong, Gu, Shihai, Zhao, Xuewei, Du, Yong, Y

Journal:

Year:

2019

Language:

english

File:

PDF, 14.36 MB

english, 2019

2

The Challenges of Advanced CMOS Process from 2D to 3D

Radamson, Henry, Zhang, Yanbo, He, Xiaobin, Cui, Hushan, Li, Junjie, Xiang, Jinjuan, Liu, Jinbiao, Gu, Shihai, Wang, Guilei

Journal:

Applied Sciences

Year:

2017

Language:

english

File:

PDF, 9.27 MB

english, 2017

3

State of the Art and Future Perspectives in Advanced CMOS Technology

Radamson, Henry H., Zhu, Huilong, Wu, Zhenhua, He, Xiaobin, Lin, Hongxiao, Liu, Jinbiao, Xiang, Jinjuan, Kong, Zhenzhen, Xiong, Wenjuan, Li, Junjie, Cui, Hushan, Gao, Jianfeng, Yang, Hong, Du, Yong, X

Journal:

Year:

2020

File:

PDF, 27.29 MB

2020

4

3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching

Andreas C. Fischer, Lyubov M. Belova, Yuri G. M. Rikers, B. Gunnar Malm, Henry H. Radamson, Mohammadreza Kolahdouz, Kristinn B. Gylfason, Göran Stemme, Frank Niklaus

Journal:

Advanced Functional Materials

Year:

2012

Language:

english

File:

PDF, 1.22 MB

english, 2012

5

Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers

Ellison, A., Radamson, H., Tuominen, M., Milita, S., Hallin, C., Henry, A., Kordina, O., Tuomi, T., Yakimova, R., Madar, R., Janzén, E.

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 774 KB

english, 1997

6

Integration of highly-strained SiGe materials in 14nm and beyond nodes FinFET technology

Wang, Guilei, Abedin, Ahmad, Moeen, Mahdi, Kolahdouz, Mohammadreza, Luo, Jun, Guo, Yiluan, Chen, Tao, Yin, Huaxiang, Zhu, Huilong, Li, Junfeng, Zhao, Chao, Radamson, Henry H.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.35 MB

english, 2015

7

Selective epitaxy growth of Si1−xGexlayers for MOSFETs and FinFETs

Radamson, Henry H., Kolahdouz, Mohammadreza

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2015

Language:

english

File:

PDF, 3.07 MB

english, 2015

8

Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts

Isheden, Christian, Seger, Johan, Radamson, Henry H., Zhang, Shi-Li, Östling, Mikael

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 281 KB

english, 2002

9

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

Wang, Guilei, Luo, Jun, Qin, Changliang, Liang, Renrong, Xu, Yefeng, Liu, Jinbiao, Li, Junfeng, Yin, Huaxiang, Yan, Jiang, Zhu, Huilong, Xu, Jun, Zhao, Chao, Radamson, Henry H., Ye, Tianchun

Journal:

Nanoscale Research Letters

Year:

2017

Language:

english

File:

PDF, 2.37 MB

english, 2017

10

Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs

Radamson, Henry H., Luo, Jun, Qin, Changliang, Yin, Huaxiang, Zhu, Huilong, Zhao, Chao, Wang, Guilei

Journal:

International Journal of High Speed Electronics and Systems

Year:

2017

Language:

english

File:

PDF, 1.24 MB

english, 2017

11

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Xie, Lu, Zhu, Huilong, Zhang, Yongkui, Ai, Xuezheng, Wang, Guilei, Li, Junjie, Du, Anyan, Kong, Zhenzhen, Yin, Xiaogen, Li, Chen, Zhao, Liheng, Li, Yangyang, Jia, Kunpeng, Li, Ben, Radamson, Henry H.

Journal:

Year:

2020

File:

PDF, 7.47 MB

2020

12

A silicon molecular beam epitaxy system dedicated to device-oriented material research

W.-X. Ni, J.O. Ekberg, K.B. Joelsson, H.H. Radamson, A. Henry, G.-D. Shen, G.V. Hansson

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 786 KB

english, 1995

13

The effect of C on emitter–base design for a single-polysilicon SiGe:C HBT with an IDP emitter

Erik Haralson, Erdal Suvar, Gunnar Malm, Henry Radamson, Yong-Bin Wang, Mikael Östling

Journal:

Applied Surface Science

Year:

2004

Language:

english

File:

PDF, 305 KB

english, 2004

14

NiSi integration in a non-selective base SiGeC HBT process

Erik Haralson, Erdal Suvar, B. Gunnar Malm, Henry Radamson, Yong-Bin Wang, Mikael Östling

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 368 KB

english, 2005

15

pMOSFETs with recessed and selectively regrown Si1−xGex source/drain junctions

Christian Isheden, Per-Erik Hellström, Martin von Haartman, Henry H. Radamson, Mikael Östling

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 229 KB

english, 2005

16

Properties of La0.75Sr0.25MnO3 films grown on Si substrate with Si1−xGex and Si1−yCy buffer layers

Joo-Hyung Kim, Alexander M. Grishin, Henry H. Radamson

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 539 KB

english, 2006

17

Foreword

Mikael Östling, B. Gunnar Malm, Henry H. Radamson

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 108 KB

english, 2011

18

3D Patterning: 3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching (Adv. Funct. Mater. 19/2012)

Andreas C. Fischer, Lyubov M. Belova, Yuri G. M. Rikers, B. Gunnar Malm, Henry H. Radamson, Mohammadreza Kolahdouz, Kristinn B. Gylfason, Göran Stemme, Frank Niklaus

Journal:

Advanced Functional Materials

Year:

2012

File:

PDF, 3.20 MB

2012

19

European Materials Research Society (EMRS) Symposium on Transport and Photonics in Si-based Nanomaterials and Nanodevices – May 9–13, 2–11

Journal:

Materials Science and Engineering: B

Year:

2012

Language:

english

File:

PDF, 87 KB

english, 2012

20

Nano-structuring in SiGe by oxidation induced anisotropic Ge self-organization

Long, Ethan, Galeckas, Augustinas, Yu Kuznetsov, Andrej, Ronda, Antoine, Favre, Luc, Berbezier, Isabelle, Radamson, Henry H.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.16 MB

english, 2013

21

Application of high-resolution x-ray diffraction for detecting defects in SiGe(C) materials

Radamson, Henry H, Hållstedt, Julius

Journal:

Journal of Physics Condensed Matter

Year:

2005

Language:

english

File:

PDF, 563 KB

english, 2005

22

Monolithic Nanoscale Photonics–Electronics Integration in Silicon and Other Group IV Elements || Basics of Integrated Photonics

Radamson, Henry

Year:

2015

Language:

english

File:

PDF, 2.11 MB

english, 2015

23

Monolithic Nanoscale Photonics–Electronics Integration in Silicon and Other Group IV Elements || Moore’s Law for Photonics and Electronics

Radamson, Henry

Year:

2015

Language:

english

File:

PDF, 2.46 MB

english, 2015

24

Monolithic Nanoscale Photonics–Electronics Integration in Silicon and Other Group IV Elements || Silicon and Group IV Photonics

Radamson, Henry

Year:

2015

Language:

english

File:

PDF, 4.15 MB

english, 2015

25

Monolithic Nanoscale Photonics–Electronics Integration in Silicon and Other Group IV Elements || Complementing Silicon With Other Materials for Light Emission, Efficient Light Modulation and Subwavelength Light Confinement

Radamson, Henry

Year:

2015

Language:

english

File:

PDF, 1.81 MB

english, 2015

26

Monolithic Nanoscale Photonics–Electronics Integration in Silicon and Other Group IV Elements || Metal Oxide Semiconductor Field Effect Transistors

Radamson, Henry

Year:

2015

Language:

english

File:

PDF, 5.66 MB

english, 2015

27

[IEEE 2014 15th International Conference on Ultimate Integration on Silicon (ULIS) - Stockholm, Sweden (2014.04.7-2014.04.9)] 2014 15th International Conference on Ultimate Integration on Silicon (ULIS) - Integrating 3D PIN germanium detectors with high-k ALD fabricated slot waveguides

Naiini, Maziar M., Radamson, Henry H., Malm, Gunnar, Ostling, Mikael

Year:

2014

Language:

english

File:

PDF, 1.60 MB

english, 2014

28

[IEEE 2012 IEEE 12th International Conference on Nanotechnology (IEEE-NANO) - Birmingham, United Kingdom (2012.08.20-2012.08.23)] 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO) - Layer-by-layer 3D printing of Si micro- and nanostructures by Si deposition, ion implantation and selective Si etching

Fischer, Andreas C., Gylfason, Kristinn B., Belova, Lyubov M., Malm, B. Gunnar, Radamson, Henry H., Kolahdouz, Mohammadreza, Rikers, Yuri G.M., Stemme, Goran, Niklaus, Frank

Year:

2012

Language:

english

File:

PDF, 1.08 MB

english, 2012

29

[IEEE 2008 International Conference on Advanced Optoelectronics and Lasers (CAOL) - Alushta, Crimea, Ukraine (2008.09.29-2008.10.4)] 2008 4th International Conference on Advanced Optoelectronics and Lasers - THz amplification based on impurity-band transitions in Si/GeSi heterostructures

Shastin, Valery N., Zhukavin, Roman Kh., Bekin, Nickolay A., Tsyplenkov, Veniamin V., Radamson, Henry H., Pavlov, Sergey G., Hubers, Heinz-Wilhelm

Year:

2008

Language:

english

File:

PDF, 76 KB

english, 2008

30

Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing

Hu, Cheng, Xu, Peng, Fu, Chaochao, Zhu, Zhiwei, Gao, Xindong, Jamshidi, Asghar, Noroozi, Mohammad, Radamson, Henry, Wu, Dongping, Zhang, Shi-Li

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 2.45 MB

english, 2012

31

Effects of carbon pre-germanidation implant into Ge on the thermal stability of NiGe films

Liu, Qingbo, Wang, Guilei, Guo, Yiluan, Ke, Xingxing, Radamson, Henry, Liu, Hong, Zhao, Chao, Luo, Jun

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.46 MB

english, 2015

32

[ECS 216th ECS Meeting - Vienna, Austria (October 4 - October 9, 2009)] ECS Transactions - Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application

Kolahdouz, Mohammadreza, Tabib Zadeh Adibi, Pooya, Afshar Farniya, Ali, Trybom, Erik, Di Benedetto, Luigi, Shayestehaminzadeh, Mohammad, Radamson, Henry H.

Year:

2009

Language:

english

File:

PDF, 312 KB

english, 2009

33

Recessed and Epitaxially Regrown SiGe(B) Source/Drain Junctions with Ni salicide contacts

Isheden, Christian, Hellström, Per-Erik, Radamson, Henry H., Östling, Mikael

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 322 KB

english, 2004

34

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Selective Epitaxial Growth with Full Control of Pattern Dependency Behavior for pMOSFET Structures

Kolahdouz, Mohammadreza, Hallstedt, Julius, Ostling, Mikael, Wise, Rick, Radamson, Henry H.

Year:

2008

Language:

english

File:

PDF, 247 KB

english, 2008

35

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Kinetic Model of SiGe Selective Epitaxial Growth Using RPCVD Technique

Kolahdouz, Mohammadreza, Maresca, Luca, Ghandi, Reza, Khatibi, Ali, Radamson, Henry H.

Year:

2010

Language:

english

File:

PDF, 906 KB

english, 2010

36

ECS Transactions [ECS 218th ECS Meeting - Las Vegas, NV (October 10 - October 15, 2010)] - Improving the Performance of SiGe-Based IR Detectors

Kolahdouz, Mohammadreza, Afshar Farniya, Ali, Östling, Mikael, Radamson, Henry H.

Year:

2010

Language:

english

File:

PDF, 307 KB

english, 2010

37

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Noise and Mobility Characteristics of Bulk and Fully Depleted SOI pMOSFETs using Si and SiGe channels

Östling, Mikael, Hållstedt, Julius, von Haartman, Martin, Hellström, Per-Erik, Radamson, Henry

Year:

2006

Language:

english

File:

PDF, 338 KB

english, 2006

38

Monolithic Nanoscale Photonics–Electronics Integration in Silicon and Other Group IV Elements || Introduction: Scope and Purpose of Book

Radamson, Henry

Year:

2015

Language:

english

File:

PDF, 26 KB

english, 2015

39

Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching

Gylfason, Kristinn B., Fischer, Andreas C., Gunnar Malm, B., Radamson, Henry H., Belova, Lyubov M., Niklaus, Frank

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2012

Language:

english

File:

PDF, 1012 KB

english, 2012

40

High Frequency Performance of SiGeC HBTs with Selectively & Non-Selectively Grown Collector

Suvar, Erdal, Haralson, Erik, Radamson, Henry H, Wang, Yong-Bin, Malm, B Gunnar, Östling, Mikael

Journal:

Physica Scripta

Year:

2004

Language:

english

File:

PDF, 215 KB

english, 2004

41

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

Haralson, Erik, Jarmar, Tobias, Seger, Johan, Radamson, Henry H., Zhang, Shi-Li, Östling, Mikael

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 1.12 MB

english, 2002

42

Systematic optimization of phosphorous diffusion for solar cell application

Kermaniha, M., Kolahdouz, M., Manavizadeh, N., Aghababa, H., Elahi, M., Iraj, M., Asl-Soleimani, E., Radamson, Henry H.

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2016

Language:

english

File:

PDF, 1.09 MB

english, 2016

43

Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 14nm node FinFETs

Qin, Changliang, Wang, Guilei, Kolahdouz, M., Luo, Jun, Yin, Huaxing, Yang, Ping, Li, Junfeng, Zhu, Huilong, Chao, Zhao, Ye, Tianchun, Radamson, Henry H.

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 2.57 MB

english, 2016

44

Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation

Duan, Ningyuan, Luo, Jun, Wang, Guilei, Liu, Jinbiao, Simoen, Eddy, Mao, Shujuan, Radamson, Henry, Wang, Xiaolei, Li, Junfeng, Wang, Wenwu, Zhao, Chao, Ye, Tianchun

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.13 MB

english, 2016

45

PREFACE

Radamson, Henry H., Ruzin, Ariel, Berbezier, Isabelle, Richter, Hans

Journal:

Thin Solid Films

Year:

2016

Language:

english

File:

PDF, 113 KB

english, 2016

46

As- or P-Doped Si Layers Grown by RPCVD for Emitter Application in SiGeC HBTs

Suvar, Erdal, Haralson, Erik, Hållstedt, Julius, Radamson, Henry H, Östling, Mikael

Journal:

Physica Scripta

Year:

2004

Language:

english

File:

PDF, 332 KB

english, 2004

47

Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

Wang, Xiaolei, Xiang, Jinjuan, Han, Kai, Wang, Shengkai, Luo, Jun, Zhao, Chao, Ye, Tianchun, Radamson, Henry H., Simoen, Eddy, Wang, Wenwu

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.56 MB

english, 2017

48

[IEEE 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Toyama, Japan (2017.2.28-2017.3.2)] 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) - Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications

Liu, Lei, Liang, Renrong, Wang, Guilei, Radamson, Henry H., Wang, Jing, Xu, Jun

Year:

2017

Language:

english

File:

PDF, 824 KB

english, 2017

49

Ultra-High Efficiency Piezotronic Sensing Using Piezo-Engineered FETs

Soleimanzadeh, Reza, Kolahdouz, Mohammadreza, Ebrahimi, Parvin, Norouzi, Maryam, Aghababa, Hossein, Radamson, Henry

Journal:

Sensors and Actuators A: Physical

Year:

2018

Language:

english

File:

PDF, 814 KB

english, 2018

50

A Comparison of Power Factor in N and P -Type SiGe Nanowires for Thermoelectric Applications

Noroozi, Mohammad, Hamawandi, Bejan, Jayakumar, Ganesh, Zahmatkesh, Katayoun, Radamson, Henry H, Toprak, Muhammet S

Journal:

Journal of Nanoscience and Nanotechnology

Year:

2017

Language:

english

File:

PDF, 5.59 MB

english, 2017

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